Effect of nitrogen incorporation to electrical and optical properties of amorphous carbon thin film prepared by thermal CVD

Author

Mohamad, F. ; Yusof, A. ; Noor, U.M. ; Rusop, M.

Author_Institution

NANO Electron. Centre (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia

fYear

2011

fDate

25-27 April 2011

Firstpage

241

Lastpage

245

Abstract

Nitrogen-doped amorphous carbon thin films have been prepared by thermal chemical vapor deposition (CVD) technique at different temperature. The preparation involved argon, camphor and nitrogen as carrier gas, carbon source and dopant respectively. The effects of nitrogen incorporation in the amorphous carbon thin film on electrical and optical properties was characterized by using Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software and UV-VIS-NIR spectroscopy. The current-voltage (I-V) measurement studies demonstrate that the conductivity increased along the deposition temperature. There are also significant changes in conductivity and optical band gap for doped and undoped thin films.

Keywords

amorphous state; carbon; chemical vapour deposition; electrical conductivity; infrared spectra; nitrogen; optical constants; thin films; ultraviolet spectra; visible spectra; C:N; UV-vis-NIR spectroscopy; carrier gas; current-voltage property; electrical properties; nitrogen-doped amorphous carbon thin films; optical band gap; optical properties; thermal CVD; thermal chemical vapor deposition; Carbon; Conductivity; Optical films; Optical variables measurement; Photonic band gap; Temperature; Temperature measurement; Amorphous carbon; Camphor; Nitrogen-doped; Thermal CVD; Thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on

Conference_Location

Kuala Lumpur

ISSN

2159-2047

Print_ISBN

978-1-61284-388-9

Type

conf

DOI

10.1109/ICEDSA.2011.5959088

Filename

5959088