DocumentCode
2365760
Title
A high frequency 0.35 μm gate length power silicon NMOSFET operating with breakdown voltage of 13 V
Author
Ohguro, T. ; Saito, M. ; Endo, K. ; Kakumoto, M. ; Yoshitomi, T. ; Ono, M. ; Momose, H.S. ; Iwai, H.
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1995
fDate
23-25 May 1995
Firstpage
114
Lastpage
118
Abstract
High frequency silicon power n-MOSFETs with 0.35 μm gate length were fabricated. The symmetrical LDD structure was adopted for its source and drain junctions. Record high fT, 8.3 GHz, and fmax, 6.0 GHz, were obtained at 3.5 V supply voltage. High breakdown voltage of 13 V was achieved concurrently due to the optimizations of the process and devices parameters. The efficiency of output power for the 900 M~2.0 GHz operation was also discussed
Keywords
UHF field effect transistors; power MOSFET; power field effect transistors; silicon; 0.35 micron; 13 V; 3.5 V; 6.0 GHz; 8.3 GHz; 900 MHz to 2.0 GHz; Si; breakdown voltage; gate length; high frequency power silicon NMOSFET; output power efficiency; symmetrical LDD structure; Acceleration; Electrodes; Erbium; Frequency; Ion implantation; MOSFET circuits; Oxidation; Silicon; Thermal degradation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location
Yokohama
ISSN
1063-6854
Print_ISBN
0-7803-2618-0
Type
conf
DOI
10.1109/ISPSD.1995.515019
Filename
515019
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