Title :
Current sensing IGBT structure with improved accuracy
Author :
Kudoh, M. ; Otsuki, M. ; Obinata, S. ; Momota, S. ; Yamazaki, T. ; Fujihira, T. ; Sakurai, K.
Author_Institution :
Fuji Electr. Co. Ltd., Nagano, Japan
Abstract :
A current sensing IGBT structure has been investigated in order to reduce collector-emitter voltage dependence of the sensing current ratio to the main IGBT current for short-circuit over-current protection. The operation physics of the current sensing IGBT during short-circuit was analyzed by numerical simulation and experimental results of the improved performance of the current sensing IGBT are presented
Keywords :
current limiters; electric current measurement; electric sensing devices; insulated gate bipolar transistors; overcurrent protection; short-circuit currents; collector-emitter voltage; current sensing IGBT; numerical simulation; short-circuit over-current protection; Circuits; Current limiters; Insulated gate bipolar transistors; Multichip modules; Physics; Production facilities; Protection; Research and development; Resistors; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515020
