Self-sustained Q-switching in InGaAs quantum dot lasers

Author

Matthews, D.R. ; Summers, H.D. ; Smowton, P.M. ; Hopkinson, M.

Author_Institution

Dept. of Phys. & Astron., Cardiff Univ., UK

fYear

2002

fDate

2002

Firstpage

75

Lastpage

76

Abstract

We investigate the performance of wide-band InGaAs quantum dot lasers operated in a passively Q-switched mode via the use of saturable absorber sections. The pulse characteristics are strongly influenced by the degree of dot coupling due to carrier transfer via the wetting layer reservoir. If this inter-dot interaction is removed Q-switching can no longer be achieved.

Keywords

III-V semiconductors; Q-switching; gallium arsenide; indium compounds; laser tuning; laser variables measurement; monochromators; optical saturable absorption; quantum dot lasers; streak photography; InGaAs; carrier transfer; inter-dot interaction; monochromator; passively Q-switched mode; pulse characteristics; quantum dot systems; saturable absorber sections; self-sustained Q-switching; streak camera; wetting layer reservoir; wide-band InGaAs quantum dot lasers; Absorption; Cameras; Frequency; Indium gallium arsenide; Laser modes; Quantum dot lasers; Semiconductor lasers; Temperature dependence; Temperature distribution; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2002. IEEE 18th International

Print_ISBN

0-7803-7598-X

Type

conf

DOI

10.1109/ISLC.2002.1041125

Filename

1041125