DocumentCode
2365868
Title
800 V GaAs MESFET for power switching applications
Author
Wright, N.G. ; Johnson, C.M. ; Neill, A. G O ; Hossin, M. ; Gwilliam, R.M.
Author_Institution
Dept. of Electr. & Electron. Eng., Newcastle upon Tyne Univ., UK
fYear
1995
fDate
23-25 May 1995
Firstpage
148
Lastpage
152
Abstract
A technologically feasible solution to the need for high-speed power switching devices is presented. The paper details the design of a new GaAs MESFET device capable of operation at voltages up to 800 V, currents up to 10 A and switching frequencies in excess of 10 MHz
Keywords
III-V semiconductors; field effect transistor switches; gallium arsenide; power MESFET; power field effect transistors; power semiconductor switches; 10 A; 10 MHz; 800 V; GaAs; MESFET; high-speed power switching device; Gallium arsenide; Geometry; MESFETs; Power engineering and energy; Power semiconductor switches; Pulse width modulation; Silicon devices; Substrates; Telephony; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location
Yokohama
ISSN
1063-6854
Print_ISBN
0-7803-2618-0
Type
conf
DOI
10.1109/ISPSD.1995.515025
Filename
515025
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