Title :
Analysis of 4500 V double trench MOS controlled thyristor
Author :
Huang, Alex Q. ; Amaratunga, Gehan ; Chen, Dan Y.
Author_Institution :
Virginia Power Electron. Centre, Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
Novel high voltage MOS controlled thyristor (MCT) structures are proposed and analysed. It was found that the double trench MCT(DTMCT) increases the turn-off capability by a factor of 4 and reduces the turn-off loss by a factor of 5 compared with single trench gate MCT(TMCT) while both have a forward blocking voltage of 4500 V. These results, combined with the excellent forward current carrying capability provided by thyristor operation, are encouraging for the DTMCT to be developed for very high voltage low loss applications
Keywords :
MOS-controlled thyristors; 4500 V; double trench MOS controlled thyristor; forward blocking voltage; high voltage DTMCT; turn-off loss; Conductivity; Current density; Insulated gate bipolar transistors; Low voltage; MOSFETs; Power electronics; Power engineering and energy; Semiconductor optical amplifiers; Switches; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515026
