DocumentCode :
2365897
Title :
Magnetic properties and photoluminescence of undoped and transition metal doped A1N nanorods
Author :
Ji, X.H. ; Lau, S.P. ; Yu, S.F. ; Herng, T.S. ; Yang, H.Y. ; Tang, S.Y. ; Sedhain, A. ; Lin, J.Y. ; Jiang, H.X.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear :
2008
fDate :
24-27 March 2008
Firstpage :
206
Lastpage :
209
Abstract :
The undoped and transition metal (TM) -doped AIN (AIN:Cu and AIN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AIN nanorods exhibited strong oxygen-related impurity emission at ~3.25 eV. However, AIN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe 3+-related and band-edge emission, respectively. Both the Cu and Fe-doped AIN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AIN:Cu and AIN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm3 at room temperature, respectively. The Fe-doped AIN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AIN nanorods.
Keywords :
III-V semiconductors; aluminium compounds; copper; ferromagnetic materials; impurities; iron; magnetic semiconductors; magnetisation; photoluminescence; semiconductor doping; ultraviolet spectra; vapour phase epitaxial growth; wide band gap semiconductors; AlN:Cu; AlN:Fe; band-edge emission; catalysis-free vapor phase method; crystalline quality; electron volt energy 3.69 eV; electron volt energy 6.02 eV; ferromagnetic materials; preferred c-axis orientation; room-temperature photoluminescence; silicon substrates; spontaneous saturated magnetization; strong oxygen-related impurity emission; temperature 293 K to 298 K; transition metal doped nanorods; ultraviolet emissions; undoped nanorods; Magnetic properties; Nanoelectronics; Photoluminescence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
Type :
conf
DOI :
10.1109/INEC.2008.4585470
Filename :
4585470
Link To Document :
بازگشت