ICBRT-an isolated channel base resistance controlled thyristor

Author

Parthasarathy, V. ; Bhalla, A. ; Chow, T.P.

Author_Institution

Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1995

fDate

23-25 May 1995

Firstpage

164

Lastpage

169

Abstract

A novel 550 V MOS-gated thyristor structure called the Isolated Channel Base Resistance Controlled Thyristor (ICBRT) is proposed in this paper. This new structure incorporates a p+ diffusion adjacent to the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controlled turn-on and turn-off features of the BRT are retained in the ICBRT along with separate turn-on and turn-off gates. A 70% improvement in the maximum controllable current density is predicted in numerical analysis and is confirmed by experimental measurements. This improvement is obtained with no sacrifice in device characteristics or process complexity

Keywords

MOS-controlled thyristors; 550 V; ICBRT; MOS-gated thyristor; current density; isolated channel base resistance controlled thyristor; p+ diffusion; turn-off; turn-on; Current density; Current measurement; Density measurement; Doping; Electrons; Implants; Insulated gate bipolar transistors; Numerical analysis; Pulp manufacturing; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515028

Filename

515028