Title :
A 2.4Gbps-4.8Gbps XDR-DRAM I/O (XIO) Link
Author :
Khawshe, Vijay ; Vyas, Kapil ; Rangnekar, Renu ; Goyal, Prateek ; Krishna, Vijay ; Prabhu, Kashinath ; Venkatesan, Pravin Kumar ; Raghavan, Leneesh ; Palwai, Rajkumar ; Thrivikraman, M. ; Desai, Kunal ; Abhyankar, Abhijit
Author_Institution :
India Design Center, Rambus Inc.
Abstract :
This paper focuses on the design of a 2.4 Gbps to 4.8 Gbps link developed in TSMC65nmG+ technology, for the high speed and high throughput interface between XDRtrade (Extreme data rate) DRAM and ASIC. Applications such as HDTV and high end graphics require high bandwidth interface between controllers and memory. This XDR I/O (XIO) link which is integrated in the controller, interfaces with the XDRtrade DRAM and provides the very high per pin bandwidth. To maintain a constant transmit swing the link supports automatic calibration for the on-die termination (ODT) and driver circuit bias. The channel timing between, ASIC pin to XDR-DRAM pin, is calibrated for all the individual pins to de-skew any channel electrical timing differences to align the data transfer during Memory Read and Writes. This calibration is done periodically to maintain constant timing margin throughout the operation. The self biased regulated PLL dual loop architecture based on is used which minimizes the clock jitter and enables high speed operation. A novel programmable Voltage Control Oscillator is used here to work at wide range of frequencies. The cell with 8 bit wide data bus and 16 bit wide command bus, consumes 520 mW at 4.0 Gbps.
Keywords :
DRAM chips; application specific integrated circuits; controllers; phase locked loops; timing jitter; voltage-controlled oscillators; ASIC; TSMC65nmG+ technology; XDR-DRAM I/O link; automatic calibration; bit rate 2.4 Gbit/s to 4.8 Gbit/s; bit rate 4.0 Gbit/s; channel electrical timing; channel timing; clock jitter; command bus; controllers; data bus; driver circuit bias; extreme data rate; high end graphics; high speed interface; high throughput interface; memory; memory read; memory writes; on-die termination; power 520 mW; programmable voltage control oscillator; self biased regulated PLL dual loop architecture; size 65 nm; storage capacity 16 bit; storage capacity 8 bit; Application specific integrated circuits; Automatic control; Bandwidth; Calibration; Driver circuits; Graphics; HDTV; Random access memory; Throughput; Timing; DQ; RQ; Regulated PLL; TSMC65nm g+; XIO;
Conference_Titel :
VLSI Design, 2009 22nd International Conference on
Conference_Location :
New Delhi
Print_ISBN :
978-0-7695-3506-7
DOI :
10.1109/VLSI.Design.2009.65