Title :
All-active tapered 1550 nm InGaAsP-BH-FP lasers for uncooled 10 Gb/s operation
Author :
Möhrle, M. ; Sigmund, A. ; Mörl, L. ; Roehle, H. ; Suna, A. ; Jacumeit, G. ; Bornholdt, Carsten ; Reier, F.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
In summary, all-active tapered 10Gb/s-1550nm InGaAsP QW BH-FP lasers have been developed. 400 μm long as-cleaved devices show low threshold current, high output power and uncooled 10 Gb/s operation up to at least 70 C.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; 10 Gbit/s; 1550 nm; 400 micron; 70 C; InGaAsP; InGaAsP QW BH-FP lasers; all-active tapered lasers; as-cleaved devices; high output power; low current; low threshold; uncooled operation; Bandwidth; Diode lasers; Fiber lasers; Optical coupling; Optical modulation; Optical transmitters; Power generation; Temperature; Thermoelectricity; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041136
