Title :
On the properties of silicon wafers for IGBT use, manufactured by direct bonding method
Author :
Morita, Etsuro ; Okada, Chizuko ; Sabai, S. ; Saito, Yuichi
Author_Institution :
Mitsubish Mater. Silicon Corp., Kaneuchi, Japan
Abstract :
Silicon wafers for IGBT use were prepared by the direct bonding process. Dimensional tolerance, properties of the bond interface and the electrical properties of the devices made from the wafers were investigated. We found that two methods can be used in direct bonding. One is a dilute HF treatment method and the other is a doped polysilicon method. The results showed that the direct bonded wafers have a large potential to be successfully used commercially
Keywords :
elemental semiconductors; insulated gate bipolar transistors; semiconductor device manufacture; silicon; wafer bonding; HF; IGBT; Si wafers; bond interface properties; dilute HF treatment method; dimensional tolerance; direct bonding method; doped polysilicon method; electrical properties; Annealing; Hafnium; Insulated gate bipolar transistors; Manufacturing; Mechanical factors; Silicon; Substrates; Surface treatment; Temperature; Wafer bonding;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515037
