DocumentCode
2366085
Title
Stimulated emission at 1.54 μm in GaAs:Er,O and issues of the laser action
Author
Eliseev, P.G. ; Gastev, S.V. ; Fijiwara, Y. ; Koizumi, A. ; Takeda, Y.
fYear
2002
fDate
2002
Firstpage
103
Lastpage
104
Abstract
We see that the laser application of Er-doped GaAs is not easy. If the laser is possible it will be a low-threshold laser because the pumping rate to saturate the Er population is rather low. However along with a temperature rise, the luminescence is quenched substantially. The increase of the linewidth will give the reduction of the room-temperature peak gain more than 75 times as compared with 4.2 K. Therefore the gain achievable in single crystal Er-doped GaAs seems to be not sufficient for the room-temperature laser action.
Keywords
erbium; gallium arsenide; infrared sources; laser stability; laser transitions; optical pumping; oxygen; semiconductor lasers; stimulated emission; 1.54 micron; 4.2 K; Er population saturation; GaAs:Er,O; low-threshold laser; luminescence; pumping; quenched; room-temperature laser; room-temperature peak gain; semiconductor lasers; single crystal; stimulated emission; temperature rise; Erbium; Gallium arsenide; Impurities; Luminescence; Optical pumping; Optical saturation; Particle beam optics; Pump lasers; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041139
Filename
1041139
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