A comparison of emitter concepts for high voltage IGBTs

Author

Bauer, F. ; Fichtner, W. ; Dettmer, H. ; Bayerer, R. ; Herr, E. ; Stockmeier ; Thiemann, U.

Author_Institution

ABB Semicond. Inc., El Segundo, CA, USA

fYear

1995

fDate

23-25 May 1995

Firstpage

230

Lastpage

235

Abstract

The impact of the injection efficiency of unshorted anode p⁺emitters on the static and dynamic electrical characteristics of high voltage non-punchthrough IGBTs is analysed using mixed mode two-dimensional device and circuit simulation tools. The results are compared to IGBT device structures with shorted anodes. IGBTs with high and low efficiency anode emitters can be designed to have the same conduction losses despite major differences in the p⁺emitter doping profiles and the carrier lifetime. Turn-off losses are in general higher for IGBTs with homogeneous low efficiency emitters. Pushing the trade-off between conduction and turn-off losses to the level set by anode shorted IGBTs is also feasible for homogeneous, low efficiency p ⁺emitter devices, though it requires approaching the technological limits of injection efficiency and carrier lifetime

Keywords

carrier lifetime; insulated gate bipolar transistors; semiconductor device models; anode p⁺emitters; carrier lifetime; conduction losses; doping profile; dynamic characteristics; high voltage nonpunchthrough IGBTs; injection efficiency; mixed mode two-dimensional device simulation; static characteristics; turn-off losses; Anodes; Charge carrier lifetime; Circuit simulation; Doping; Insulated gate bipolar transistors; Manufacturing; Silicon; Switching loss; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515040

Filename

515040