DocumentCode
2366144
Title
Gain, loss and α-factor in 2.5-μm In(Al)GaAsSb/GaSb Type-I QW lasers with 1W CW output power
Author
Belenky, G. ; Kim, J.G. ; Shterengas, L. ; Martinelli, R.U. ; Garbuzov, D.
Author_Institution
State Univ. of New York, Stony Brook, NY, USA
fYear
2002
fDate
2002
Firstpage
111
Lastpage
112
Abstract
1W CW operation of 2.5-μm type-I DQW In(Al)GaAsSb/GaSb lasers is demonstrated. Results of the direct measurements of the gain, loss and α-factor are presented and discussed.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical losses; quantum well lasers; α-factor; CW output power; In(Al)GaAsSb-GaSb; InAlGaAsSb/GaSb type-I quantum well lasers; laser gain; laser loss; Current measurement; Diode lasers; Gain measurement; Gas lasers; Laser modes; Loss measurement; Power generation; Power lasers; Temperature measurement; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041142
Filename
1041142
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