DocumentCode
2366151
Title
The effect of electron irradiation and proton implantation on and a novel operation of IGBT integrated current sensors
Author
Shen, Z.J. ; Parthasarathy, V. ; Chow, T.P.
Author_Institution
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
1995
fDate
23-25 May 1995
Firstpage
236
Lastpage
240
Abstract
In this paper, the effect of electron irradiation and proton implantation on a punchthrough-type, n-channel, 600 V vertical IGBT and its integrated current sensors is studied. Also, we have applied internal voltage probing to examine the potential surrounding active and MOS integrated sensors
Keywords
electric current measurement; electric sensing devices; electron beam effects; insulated gate bipolar transistors; ion implantation; proton effects; 600 V; MOS integrated current sensors; active sensors; electron irradiation; internal voltage probing; proton implantation; punchthrough-type n-channel vertical IGBT; Electrons; Fabrication; Insulated gate bipolar transistors; Intelligent sensors; MOSFET circuits; Power electronics; Protons; Pulp manufacturing; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location
Yokohama
ISSN
1063-6854
Print_ISBN
0-7803-2618-0
Type
conf
DOI
10.1109/ISPSD.1995.515041
Filename
515041
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