DocumentCode
2366162
Title
Raman and morphological characteristics of carbon nanotubes depending on substrate temperatures by chemical vapor deposition
Author
Guo, P.S. ; Sun, Zhongyuan ; Chen, T. ; Xu, Mengdi ; Zheng, Z.H. ; Sun, Y.
Author_Institution
Dept. of Phys., East China Normal Univ., Shanghai
fYear
2008
fDate
24-27 March 2008
Firstpage
271
Lastpage
275
Abstract
Carbon nanotubes (CNTs) films were synthesized at low pressure using nickel as catalyst by thermal chemical vapor deposition with hydrogen-acetylene mixture. The Raman characteristics and morphological features of CNTs at different substrate temperatures were investigated. The variation of CNTs morphological feature mainly depends on the substrate temperatures. In the low temperature range (450-550degC), the film consists of graphite particles and CNTs mixture with some amorphous phase. With increase the temperature (550-650degC), the tube content increases, and the tube diameter decreases. At high temperature range (700-800degC), the film consists of CNTs and nanoparticles mixture. Raman spectroscopy results show that the intensity ratio ID/IG of the G- and D-band has a maximum at the medium temperature of 600degC, and the width of G band becomes narrow with the substrate temperature. The growth behaviors of CNTs at different temperatures are discussed based on the experimental results.
Keywords
Raman spectra; amorphous state; carbon nanotubes; catalysts; chemical vapour deposition; graphite; high-temperature effects; nanoparticles; nickel; thin films; C; Ni; Raman characteristics; amorphous phase; carbon nanotube films; catalyst; chemical vapor deposition; graphite particles; high temperature effect; hydrogen-acetylene mixture; morphological characteristics; nanoparticles; nickel; substrate temperatures; temperature 450 C to 650 C; temperature 700 C to 800 C; Amorphous materials; Carbon nanotubes; Chemical vapor deposition; Nanoparticles; Nickel; Raman scattering; Spectroscopy; Substrates; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585484
Filename
4585484
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