The modified HSINFET using the trenched JBS injector

Author

Kim, Han-Soo ; Kim, Jae-Hyung ; Lee, Byeong-Hoon ; Han, Min-Koo ; Han, Seung Youp ; Choi, Yearn-Ik ; Chung, Sang-Koo

Author_Institution

Dept. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1995

fDate

23-25 May 1995

Firstpage

247

Lastpage

251

Abstract

A Hybrid Schottky INjector Field Effect Transistor (HSINFET) which increases the forward conduction current without sacrificing the latch-up capability and turn-off characteristics, is proposed. The feature of the structure is that the hybrid Schottky injector is implemented by the trench sidewall Schottky contact and p-n junction injector at the bottom of a trench. The device characteristics of the proposed HSINFET are numerically simulated and compared with conventional devices. The proposed HSINFET exhibits a lower forward voltage drop than the conventional HSINFET by 0.4 V at 100 A/cm²

Keywords

power field effect transistors; HSINFET; forward conduction current; forward voltage drop; hybrid Schottky injector field effect transistor; latch-up; numerical simulation; p-n junction; trench sidewall Schottky contact; trenched JBS injector; turn-off; Anodes; Electrodes; FETs; Insulated gate bipolar transistors; Numerical simulation; P-n junctions; Power integrated circuits; Schottky barriers; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515043

Filename

515043