InGaN MQW laser diode with integrated intracavity electroabsorption modulator

Author

Kneissl, Michael ; Paoli, Thomas L. ; Kiesel, Peter ; Treat, David W. ; Teepe, Mark ; Miyashita, Naoko ; Johnson, Noble M.

Author_Institution

Palo Alto Res. Center Inc., CA, USA

fYear

2002

fDate

2002

Firstpage

125

Lastpage

126

Abstract

Summary form only given. We demonstrate a two-section InGaN multiple-quantum-well (MQW) laser diode comprised of an amplifier section and a monolithically integrated electroabsorption (EA) modulator. Modulator and gain sections are electrically separated by a narrow dry etched trench, but are optically coupled and share the same InGaN MQW active region. The basic concept of the device is to utilize the strong built-in piezoelectric fields in the InGaN MQW active region to achieve the necessary wavelength offset between the emission wavelength of the amplifier section and the absorption edge of the EA modulator.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; etching; gallium compounds; indium compounds; integrated optoelectronics; piezoelectricity; quantum well lasers; InGaN; InGaN MQW laser diode; absorption edge; electrically separated; gain sections; integrated intracavity electroabsorption modulator; monolithically integrated electroabsorption modulator; narrow dry etched trench; strong built-in piezoelectric fields; two-section InGaN multiple-quantum-well laser diode; wavelength offset; Absorption; Diode lasers; III-V semiconductor materials; Laser modes; Optical amplifiers; Optical materials; Power amplifiers; Power lasers; Quantum well devices; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2002. IEEE 18th International

Print_ISBN

0-7803-7598-X

Type

conf

DOI

10.1109/ISLC.2002.1041149

Filename

1041149