DocumentCode
2366253
Title
Optimisation of 635 nm tensile strained GaInP laser diodes
Author
Smowton, P.M. ; Lewis, G.M. ; Chow, W.W. ; Jones, G. ; Bland, S.
Author_Institution
Dept. of Phys. & Astron., Cardiff Univ., UK
fYear
2002
fDate
2002
Firstpage
127
Lastpage
128
Abstract
Summary form only given. We have measured the affect of strain on each of the recombination mechanisms that make up the total threshold current within 635nm laser diodes with a range of strain-well width combinations. Nonradiative recombination within the quantum well is a significant proportion of the total threshold current and determines the optimum strain-well width combination.
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser transitions; optimisation; quantum well lasers; 635 nm; GaInP; nonradiative recombination; optimum strain-well width combination; quantum well; recombination mechanisms; strain-well width combinations; tensile strained GaInP laser diode optimisation; total threshold current; Capacitive sensors; Current density; Current measurement; Diode lasers; Polarization; Quantum well lasers; Radiative recombination; Spontaneous emission; Tellurium; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041150
Filename
1041150
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