DocumentCode
2366292
Title
Influence of a bonded interface on the DC characteristics of a high voltage bipolar transistor
Author
Laporte, A. ; Bagneres, M. ; Strutzenberger, D. ; Reynes, J.-M. ; Sarrabayrouse, G.
Author_Institution
Motorola Semicond. S.A., Toulouse, France
fYear
1995
fDate
23-25 May 1995
Firstpage
279
Lastpage
282
Abstract
The bonded interface situated in an active layer of a high voltage bipolar transistor (base or collector) leads to a deterioration of the DC characteristics. The electron lifetime modification or the interfacial potential barrier due to the interfacial defects or impurities could be at the origin of these degradations
Keywords
carrier lifetime; power bipolar transistors; wafer bonding; DC characteristics; bonded interface; defects; electron lifetime; high voltage bipolar transistor; impurities; potential barrier; Bipolar transistors; Charge measurement; Current measurement; Electrical resistance measurement; Lead compounds; Position measurement; Space charge; Temperature; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location
Yokohama
ISSN
1063-6854
Print_ISBN
0-7803-2618-0
Type
conf
DOI
10.1109/ISPSD.1995.515049
Filename
515049
Link To Document