A lateral SOI BMFET with high current gain

Author

Kim, Seong-Dong ; Byeon, Dae-Seok ; Yang, Kyoung ; Kwon, Oh-Kyong ; Han, Min-Koo ; Choi, Yearn-Ik

Author_Institution

Dept. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1995

fDate

23-25 May 1995

Firstpage

288

Lastpage

292

Abstract

A new lateral SOI BMFET, which has a lateral JFET structure with a channel formed between a buried oxide and a p⁺ gate junction, is proposed and verified by numerical simulation. It is shown that the normally-off characteristics and the current gain are changed by the potential barrier of the channel region, which is controlled by the buried oxide thickness and the substrate dopant type as well as the channel geometry and the doping concentration of the n drift region. Higher breakdown voltage and larger current gain are obtained in the range of high drain current by introducing a low-resistivity n layer in the drift region

Keywords

junction gate field effect transistors; power field effect transistors; silicon-on-insulator; JFET; bipolar mode field effect transistor; breakdown voltage; buried oxide; current gain; lateral SOI BMFET; normally-off characteristics; numerical simulation; p⁺ gate junction; potential barrier; substrate doping; Conductivity; Current density; Doping; Epitaxial layers; FETs; Geometry; Low voltage; Numerical simulation; Substrates; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515051

Filename

515051