Title :
The temperature and pressure dependence of 1.3 μm GaInNAs vertical-cavity surface-emitting lasers (VCSELs)
Author :
Knowles, G. ; Fehse, R. ; Tomic, S. ; Sweeney, S.J. ; Sale, T.E. ; Adams, A.R. ; O´Reilly, E.P. ; Steinle, G. ; Riechert, H.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
We have modelled the temperature and pressure dependence of the threshold current of GaInNAs-based VCSELs and compared the results with measured data.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser theory; laser transitions; semiconductor device models; surface emitting lasers; thermo-optical effects; 1.3 micron; GaInNAs; GaInNAs vertical-cavity surface-emitting lasers; VCSELs; pressure dependence; temperature dependence; threshold current; Current measurement; Gain measurement; Laser modes; Laser theory; Pressure measurement; Surface emitting lasers; Temperature dependence; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041155
