DocumentCode
2366359
Title
The temperature and pressure dependence of 1.3 μm GaInNAs vertical-cavity surface-emitting lasers (VCSELs)
Author
Knowles, G. ; Fehse, R. ; Tomic, S. ; Sweeney, S.J. ; Sale, T.E. ; Adams, A.R. ; O´Reilly, E.P. ; Steinle, G. ; Riechert, H.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
fYear
2002
fDate
2002
Firstpage
139
Lastpage
140
Abstract
We have modelled the temperature and pressure dependence of the threshold current of GaInNAs-based VCSELs and compared the results with measured data.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser theory; laser transitions; semiconductor device models; surface emitting lasers; thermo-optical effects; 1.3 micron; GaInNAs; GaInNAs vertical-cavity surface-emitting lasers; VCSELs; pressure dependence; temperature dependence; threshold current; Current measurement; Gain measurement; Laser modes; Laser theory; Pressure measurement; Surface emitting lasers; Temperature dependence; Temperature distribution; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041155
Filename
1041155
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