• DocumentCode
    2366363
  • Title

    Preparation of PZT ferroelectric thin films by electrochemical reduction

  • Author

    Ren, P.F. ; Zhu, J.L. ; Zou, X.P. ; Cheng, J. ; Li, F. ; Zhang, H.D. ; Zhu, G. ; Wang, M.F. ; Su, Y.

  • Author_Institution
    Res. Center for Sensor Technol., Beijing Inf. Technol. Inst., Beijing
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    310
  • Lastpage
    314
  • Abstract
    In this paper, we report the growth of lead zirconate titanate (PZT) ferroelectric thin films, formed by means of the electrochemical reduction. In our experiment, the electrolyte was prepared by lead nitrate (Pb(NO3)2), zirconium oxide chloride (ZrOCl2-8H2O) and titanium chloride (TiCl3) solution. A graphite plate with 1 cm of width was employed as the anode, and a stainless steel plate was employed as both cathode and substrate. The controlled current that was supplied by a DC power supply passed through the electrolyte to deoxidize PZT precursor films on the surface of the stainless steel at room temperature. The results indicate that the atomic ratio of compositions in the film can be controlled by controlling the molar concentration of electrolytic solution, current density and reaction time. The perovskite PZT thin films can be obtained when the precursor films are heated to a certain temperature for sintering.
  • Keywords
    anodes; cathodes; electrochemistry; electrolytes; ferroelectric thin films; lead compounds; reduction (chemical); sintering; zirconium compounds; DC power supply; PZT; PZT thin films; anode; cathode; electrochemical reduction; electrolyte; electrolytic solution; graphite plate; lead nitrate; lead zirconate titanate ferroelectric thin film growth; molar concentration; precursor films; stainless steel plate; substrate; titanium chloride solution; zirconium oxide chloride; Anodes; Cathodes; Ferroelectric materials; Lead compounds; Steel; Substrates; Temperature control; Titanium compounds; Transistors; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585494
  • Filename
    4585494