Title :
Channel Thickness Effect on High-Frequency Performance of Poly-Si Thin-Film Transistors
Author :
Kun-Ming Chen ; Tzu-I Tsai ; Ting-Yao Lin ; Horng-Chih Lin ; Tien-Sheng Chao ; Guo-Wei Huang ; Tiao-Yuan Huang
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
In this letter, we present the high-frequency performances of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with a nominal gate length of 0.22 μm. Owing to the short gate length and adoption of salicide process, cutoff frequency (fT) of 17 GHz and maximum oscillation frequency of ~ 21 GHz are obtained. The result suggests that the poly-Si TFT technology is applicable to RF integrated circuits up to 2 GHz. In addition, we also investigate the effects of channel thickness on the high-frequency characteristics of poly-Si TFTs. We find that the variation of fT with channel thickness is mainly due to the change in transconductance.
Keywords :
elemental semiconductors; radiofrequency integrated circuits; silicon; thin film transistors; RF integrated circuits; Si; channel thickness effect; polycrystalline silicon; salicide process; thin film transistors; Channel thickness; gate length; radio frequency; thin-film transistors (TFTs); transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2267809
