Title :
InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth
Author :
Shau, R. ; Bohm, G. ; Kohler, Fabian ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
This paper presents VCSELs in the InGaAlAs-InP system that have been realized from 1.31 μm to 1.8 μm enabling the buried tunnel junction technology with particular emphasis on output power, operation temperature and modulation speed at 1.55 μm, aiming for 10 Gbit/s transmission.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; laser transitions; optical transmitters; semiconductor lasers; surface emitting lasers; 1.31 to 1.8 micron; 1.55 micron; 10 Gbit/s; Gbit/s transmission; InGaAlAs-InP; buried tunnel junction technology; high output power; large modulation bandwidth; modulation speed; operation temperature; vertical-cavity surface-emitting lasers; Bandwidth; Dielectric substrates; Gold; Indium phosphide; Mirrors; Power generation; Power lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041157
