DocumentCode
2366404
Title
InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth
Author
Shau, R. ; Bohm, G. ; Kohler, Fabian ; Amann, M.-C.
Author_Institution
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
fYear
2002
fDate
2002
Firstpage
143
Lastpage
144
Abstract
This paper presents VCSELs in the InGaAlAs-InP system that have been realized from 1.31 μm to 1.8 μm enabling the buried tunnel junction technology with particular emphasis on output power, operation temperature and modulation speed at 1.55 μm, aiming for 10 Gbit/s transmission.
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; laser transitions; optical transmitters; semiconductor lasers; surface emitting lasers; 1.31 to 1.8 micron; 1.55 micron; 10 Gbit/s; Gbit/s transmission; InGaAlAs-InP; buried tunnel junction technology; high output power; large modulation bandwidth; modulation speed; operation temperature; vertical-cavity surface-emitting lasers; Bandwidth; Dielectric substrates; Gold; Indium phosphide; Mirrors; Power generation; Power lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041157
Filename
1041157
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