Title :
High temperature continuous-wave operation of 1.3-1.55 μm VCSELs with InP/air-gap DBRs
Author :
Lin, Chao-Kun ; Bour, David ; Zhu, Jintian ; Perez, William ; Leary, Michael ; Tandon, Ashish ; Corzine, Scott ; Tan, Michael
Author_Institution :
Agilent Labs., Palo Alto, CA, USA
Abstract :
High temperature CW operation of electrically pumped 1.3-1.55 μm MQW VCSELs using top and bottom InP/air-gap DBRs with record low threshold current density is demonstrated.
Keywords :
III-V semiconductors; current density; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; 1.3 to 1.55 micron; InGaAsP; InP; InP/air-gap DBR laser; InP/air-gap DBRs; MQW VCSELs; VCSEL; electrically pumped; high temperature CW operation; high temperature continuous-wave operation; low threshold current density; Air gaps; Distributed Bragg reflectors; Etching; Indium gallium arsenide; Indium phosphide; Optical filters; Substrates; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041158
