Title :
High-power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications
Author :
Deubert, S. ; Klopf, F. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Dept. of Technische Phys., Wurzburg Univ., Germany
Abstract :
Quantum dot lasers with high cw output power, very low temperature shift of emission wavelength and vertical far field angles below 35° could be realized.
Keywords :
III-V semiconductors; aluminium compounds; brightness; gallium arsenide; indium compounds; optimisation; quantum dot lasers; waveguide lasers; GaInAs-AlGaAs; emission wavelength; high brightness applications; high cw output power; high-power GaInAs/AlGaAs quantum dot lasers; optimized waveguide design; vertical far field angles; very low temperature shift; waveguide lasers; Brightness; Design optimization; Optical design; Optical waveguides; Power lasers; Quantum dot lasers; Quantum well lasers; Temperature; US Department of Transportation; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041159
