DocumentCode
2366437
Title
High-power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications
Author
Deubert, S. ; Klopf, F. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Dept. of Technische Phys., Wurzburg Univ., Germany
fYear
2002
fDate
2002
Firstpage
147
Lastpage
148
Abstract
Quantum dot lasers with high cw output power, very low temperature shift of emission wavelength and vertical far field angles below 35° could be realized.
Keywords
III-V semiconductors; aluminium compounds; brightness; gallium arsenide; indium compounds; optimisation; quantum dot lasers; waveguide lasers; GaInAs-AlGaAs; emission wavelength; high brightness applications; high cw output power; high-power GaInAs/AlGaAs quantum dot lasers; optimized waveguide design; vertical far field angles; very low temperature shift; waveguide lasers; Brightness; Design optimization; Optical design; Optical waveguides; Power lasers; Quantum dot lasers; Quantum well lasers; Temperature; US Department of Transportation; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041159
Filename
1041159
Link To Document