Thermal stress related packaging failure in power IGBT modules

Author

Wu, Wuchen ; Held, Marcel ; Jacob, Peter ; Scacco, Paolo ; Birolini, Alessandro

Author_Institution

Reliability Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1995

fDate

23-25 May 1995

Firstpage

330

Lastpage

334

Abstract

Thermomechanical stress behavior and its influence on the reliability of large area die bonding of 400 A/1200 V IGBT modules were studied in this paper. The forming and growing process of voids and cracks in the solder layers of fine-prepared IGBT cross sectional samples was quasi-dynamically observed during thermal cycling test. In consideration of the thermal mismatch in IGBT packaging, thermal stress behavior in an IGBT sandwich structure versus temperature changes, was numerically simulated and supported by the experimental results

Keywords

deformation; failure analysis; insulated gate bipolar transistors; modules; power transistors; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; stress analysis; thermal analysis; thermal stress cracking; thermal stresses; voids (solid); 1200 V; 400 A; IGBT packaging; cracks; large area die bonding; power IGBT modules; reliability; solder layers; temperature change; thermal cycling test; thermal stress related packaging failure; thermomechanical stress behavior; voids; Electronic packaging thermal management; Fatigue; Insulated gate bipolar transistors; Joining processes; Microassembly; Silicon carbide; Temperature; Testing; Thermal stresses; Thermomechanical processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515059

Filename

515059