Title :
Thermal stress related packaging failure in power IGBT modules
Author :
Wu, Wuchen ; Held, Marcel ; Jacob, Peter ; Scacco, Paolo ; Birolini, Alessandro
Author_Institution :
Reliability Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
Thermomechanical stress behavior and its influence on the reliability of large area die bonding of 400 A/1200 V IGBT modules were studied in this paper. The forming and growing process of voids and cracks in the solder layers of fine-prepared IGBT cross sectional samples was quasi-dynamically observed during thermal cycling test. In consideration of the thermal mismatch in IGBT packaging, thermal stress behavior in an IGBT sandwich structure versus temperature changes, was numerically simulated and supported by the experimental results
Keywords :
deformation; failure analysis; insulated gate bipolar transistors; modules; power transistors; semiconductor device packaging; semiconductor device reliability; semiconductor device testing; stress analysis; thermal analysis; thermal stress cracking; thermal stresses; voids (solid); 1200 V; 400 A; IGBT packaging; cracks; large area die bonding; power IGBT modules; reliability; solder layers; temperature change; thermal cycling test; thermal stress related packaging failure; thermomechanical stress behavior; voids; Electronic packaging thermal management; Fatigue; Insulated gate bipolar transistors; Joining processes; Microassembly; Silicon carbide; Temperature; Testing; Thermal stresses; Thermomechanical processes;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515059
