A physically based DMOS transistor model implemented in SPICE for advanced power IC TCAD

Author

Chung, Yeonbae ; Burk, Dorothea E.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

fYear

1995

fDate

23-25 May 1995

Firstpage

340

Lastpage

345

Abstract

A physics-based predictive semi-numerical lateral DMOS transistor model, which is directly implemented in commercially available SPICE2G.6 source code, is described and verified with experimental measurements. Different from the existing power device subcircuit models, our model has an ability to account for the unique device structure such as the graded-channel and the non-planar-drift region. With an advantage of directly using device and process parameters, the new model implemented in SPICE may be useful in computer-aided power IC design

Keywords

SPICE; circuit CAD; equivalent circuits; integrated circuit design; power MOSFET; power integrated circuits; DMOS transistor model; SPICE; SPICE2G.6 source code; computer-aided power IC design; graded channel; lateral DMOS transistor; nonplanar-drift region; physically based transistor model; power IC TCAD; seminumerical model; Circuit simulation; Computational modeling; Equations; Integrated circuit modeling; Power integrated circuits; Predictive models; SPICE; Semiconductor process modeling; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515061

Filename

515061