Title :
Investigation of the optical losses in photonic crystal laser cavities by varying the number of lattice periods
Author :
Lee, Po-Tsung ; Cao, J.R. ; Choi, Sang-Jun ; Yang, Tian ; ´Brien, John D O ; Dapkus, P.Daniel
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
We focus on InGaAsP MQW photonic crystal lasers and an experimental determination of the optical loss in these resonant cavities. We form optical microcavities by removing air holes from the photonic crystal lattice in a thin dielectric slab. The three-dimensional confinement of light is achieved through total internal reflection at the semiconductor/air interface and by the photonic bandgap introduced by the two-dimensional photonic crystal lattice. In this paper we report the results of experiments in which the number of periods of the photonic crystal lattice is varied across an array of lasers. This allows us to determine the optical losses and cavity quality factors in these cavities as a function of the number of lattice periods.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; microcavity lasers; optical losses; photonic crystals; quantum well lasers; InGaAsP; InGaAsP MQW photonic crystal lasers; MOCVD growth; cavity quality factors; lattice periods; optical losses; optical microcavities; photonic crystal laser cavities; photonic crystal lattice; resonant cavity; thin dielectric slab; three-dimensional light confinement; Dielectrics; Lattices; Microcavities; Optical losses; Photonic crystals; Quantum well devices; Resonance; Semiconductor laser arrays; Semiconductor lasers; Slabs;
Conference_Titel :
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN :
0-7803-7598-X
DOI :
10.1109/ISLC.2002.1041163