Subcircuit SPICE modeling of a lateral IGBT for high voltage power IC design

Author

Kawaguchi, Yusuke ; Terazaki, Yoshinori ; Nakagawa, Akio

Author_Institution

Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

23-25 May 1995

Firstpage

346

Lastpage

349

Abstract

In this paper, a subcircuit model of lateral IGBTs on SOI substrate for SPICE simulation is presented. The model accurately takes into account the characteristics of lateral IGBTs based on the results of 2-D device simulators. Static and transient analysis of a lateral IGBT was carried out, using this model. The simulation results agreed very well with experimental results. An application of the proposed model to a over current protection circuit design is presented

Keywords

SPICE; circuit CAD; insulated gate bipolar transistors; integrated circuit design; power integrated circuits; power semiconductor switches; power transistors; semiconductor device models; silicon-on-insulator; transient analysis; 2D device simulation; HV power IC design; SOI substrate; high voltage IC design; lateral IGBT; overcurrent protection circuit design; static analysis; subcircuit SPICE modeling; subcircuit model; transient analysis; Capacitors; Circuit simulation; Insulated gate bipolar transistors; Integrated circuit modeling; MOSFET circuits; Power integrated circuits; SPICE; Tail; Threshold voltage; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515062

Filename

515062