Fabrication and characterization of p-type ZnO nano-thin films prepared by in situ oxidation of sputtered Zn3N2

Author

Le-xi, Shao ; Jun, Zhang

Author_Institution

Sch. of Phys. Sci. & Technol., Zhanjiang Normal Univ., Zhanjiang

fYear

2008

fDate

24-27 March 2008

Firstpage

354

Lastpage

357

Abstract

The precursor Zn₃N₂ films were deposited on quartz glass substrates by reactive DC magnetron sputtering and oxidized in situ at various temperatures by introducing pure oxygen gas directly into the deposition chamber. X-ray diffraction (XRD), scanning electron microscopy (SEM), UVNIS transmittance, Hall-effect measurements and photoluminescence (PL) were carried out to investigate the structural, optical and electrical properties of the samples. The results showed that the properties of ZnO:N films strongly depended on the oxidation temperature and duration. By optimizing the oxidization conditions, high-quality p-type ZnO:N films with c-axis preferential orientation were obtained. Hall effect measurement results showed that the ZnO:N films oxidized at 500degC had a resistivity of 0.7 Omega-cm, a hole concentration of 6.2times10¹⁸cm^-3 and a mobility of 4.95 cm²/Vldrs while the films still showed high transmittance in the visible region and strong excitonic UV emission at 387 nm.

Keywords

Hall effect; II-VI semiconductors; X-ray diffraction; electrical resistivity; excitons; hole mobility; nanotechnology; oxidation; photoluminescence; scanning electron microscopy; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; zinc compounds; Hall-effect measurements; SEM; SiO₂; UVNIS transmittance; X-ray diffraction; XRD; ZnO:N; c-axis preferential orientation; electrical properties; excitonic UV emission; hole concentration; hole mobility; optical properties; oxidation; p-type semiconductor nanothin films; photoluminescence; quartz glass substrates; reactive DC magnetron sputtering; resistivity 0.7 ohmcm; scanning electron microscopy; structural properties; temperature 500 C; wavelength 387 nm; Fabrication; Glass; Optical films; Optical microscopy; Oxidation; Scanning electron microscopy; Sputtering; Temperature; X-ray diffraction; Zinc oxide; DC magnetron sputtering; nano-thin film; p-type ZnO;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International

Conference_Location

Shanghai

Print_ISBN

978-1-4244-1572-4

Electronic_ISBN

978-1-4244-1573-1

Type

conf

DOI

10.1109/INEC.2008.4585503

Filename

4585503