DocumentCode
2366584
Title
Direct measurement of facet temperature up to the melting point and COD in high power 980nm semiconductor diode lasers
Author
Sweeney, Stephen J. ; Lyons, Leslie J. ; Lock, Daren ; Adams, Alfred R.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
fYear
2002
fDate
2002
Firstpage
161
Lastpage
162
Abstract
We measure the high-energy emission from high power lasers and extract the facet temperature. Severe heating is observed up to the onset of catastrophic optical damage (COD).
Keywords
infrared sources; laser beam effects; laser transitions; optical testing; semiconductor device measurement; semiconductor device testing; semiconductor lasers; temperature measurement; 980 nm; catastrophic optical damage; direct measurement; high power 980nm semiconductor diode lasers; high power lasers; high-energy emission; laser diode facet temperature measurement; severe heating; Absorption; Erbium-doped fiber lasers; Face detection; Heating; Optical attenuators; Power lasers; Power measurement; Semiconductor lasers; Stimulated emission; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2002. IEEE 18th International
Print_ISBN
0-7803-7598-X
Type
conf
DOI
10.1109/ISLC.2002.1041166
Filename
1041166
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