Characteristics of an improved lateral emitter switched thyristor

Author

Chen, Wei ; Amaratunga, Gehan A J

Author_Institution

Dept. of Eng., Cambridge Univ., UK

fYear

1995

fDate

23-25 May 1995

Firstpage

416

Lastpage

421

Abstract

A new LEST (lateral emitter switched thyristor) structure is proposed and experimentally verified. The structure differs from the conventional LEST in that it embeds a floating ohmic contact between the n-drift region and the n+ floating emitter. Both simulation and experimental results show that the device has an enhanced turn-on capability compared with the conventional LEST without deteriorating the other characteristics. The device is fabricated using a 3 μm CMOS process to have a 320 V breakdown and 0.7 V threshold voltage. Thyristor turn-on is observed at an anode current density of 12.5 A/cm² with 5 V gate voltage. The maximum MOS controllable current density is in excess of 200 A with 5 V gate voltage

Keywords

CMOS integrated circuits; MOS-controlled thyristors; power integrated circuits; 0.7 V; 200 A; 3 micron; 320 V; 5 V; CMOS process; floating ohmic contact; lateral emitter switched thyristor; turn-on capability; Anodes; CMOS process; Cathodes; Charge carrier processes; Current density; MOS devices; Ohmic contacts; Threshold voltage; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on

Conference_Location

Yokohama

ISSN

1063-6854

Print_ISBN

0-7803-2618-0

Type

conf

DOI

10.1109/ISPSD.1995.515074

Filename

515074