Title :
Oxygen-contamination-free ultra-low-resistance silicided contact technology for high performance power devices
Author :
Ino, K. ; Yamada, K. ; Jong, G.S. ; Ohmi, T.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
We have developed an ultra-low contact resistance metallization process employing oxygen-contamination-free silicidation technology combined with ion beam mixing technique. Suppression of native-oxide layer formation on the metal surface by use of an in situ formed Si encapsulation layer has resulted in ultra-low metal-to-silicon contact resistances of 3.3×10-9 Ω·cm2 and 7.5×10-9 Ω·cm2 with Ta silicided contacts for n+-Si and p+-Si, respectively
Keywords :
contact resistance; encapsulation; ion beam mixing; power semiconductor devices; semiconductor device metallisation; tantalum compounds; O-contamination-free silicided contact; Si encapsulation layer; Ta silicided contacts; TaSi-Si; contact resistance; high performance power devices; ion beam mixing technique; metallization process; n+-Si; native-oxide layer formation suppression; p+-Si; ultra-low-resistance silicided contact technology; Annealing; Argon; Encapsulation; Ion beams; Metallization; Power engineering and energy; Semiconductor films; Silicides; Silicon; Surface resistance;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515077
