Title :
Investigation on the long term reliability of power IGBT modules
Author :
Wu, Wuchen ; Held, Marcel ; Jacob, Peter ; Scacco, Paolo ; Birolini, Allesandro
Author_Institution :
Reliability Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
More than forty 300 A/400 A 1200 V IGBT modules, coming from different manufactures, were studied by an intermittent operating life test (power cycling) in order to estimate the long term reliability of the modern power IGBT modules. The test results and the failure analysis results indicate that no module could pass 106 power cycles and most tested modules failed in emitter bonding wire lifting from the bonding pad. Besides, recrystallization and migration in bonding pad metallization, electrothermal migration caused bonding wire breaking, and local overheat induced die burn-out failure were also observed in this study
Keywords :
electromigration; failure analysis; insulated gate bipolar transistors; lead bonding; modules; power transistors; recrystallisation; semiconductor device metallisation; semiconductor device packaging; semiconductor device reliability; 1200 V; 300 A; 400 A; bonding pad metallization; bonding wire breaking; electrothermal migration; emitter bonding wire lifting; failure analysis; local overheat induced die burn-out failure; long term reliability; operating life test; power IGBT modules; power cycling; recrystallization; Circuit testing; Cooling; Electrical resistance measurement; Heating; Insulated gate bipolar transistors; Semiconductor device measurement; Temperature measurement; Temperature sensors; Thermal resistance; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1995. ISPSD '95., Proceedings of the 7th International Symposium on
Conference_Location :
Yokohama
Print_ISBN :
0-7803-2618-0
DOI :
10.1109/ISPSD.1995.515079
