Title :
Doping Cu into ZnO nanostructures
Author :
Xing, G.Z. ; Tao, J.G. ; Li, G.P. ; Zhang, Z. ; Wong, L.M. ; Wang, S.J. ; Huan, C. H A ; Wu, T.
Author_Institution :
Sch. of Phys. & Math. Sci., Nanyang Technol. Univ., Singapore
Abstract :
Controlled doping appropriate elements into semiconductor nanostructures is of vital importance to develop novel materials and functional devices. Herein, we present three methods to synthesize Cu-doped ZnO nanostructures using a simple vapor phase transport process and adopting CuCl2, CuO or Cu as doping precursors. The corresponding morphology, structure, and chemical composition were investigated using field emission scanning electron microscope, transmission electron microscope, X-ray diffraction and X-ray photoelectron spectroscopy. We show that these three methods produce nanostructures with different morphologies and doping levels. This work paves the way for investigating the physical properties of Cu-doped ZnO nanostructures and furthermore facilitates the synthesis of other transition-metal-doped nanomaterials.
Keywords :
II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; chemical analysis; field emission electron microscopy; nanostructured materials; scanning electron microscopy; semiconductor doping; wide band gap semiconductors; zinc compounds; X-ray diffraction; X-ray photoelectron spectroscopy; ZnO:Cu; chemical composition; doping levels; field emission scanning electron microscopy; functional devices; physical properties; semiconductor nanostructures; transition-metal-doped nanomaterials; transmission electron microscopy; vapor phase transport process; Electron emission; Morphology; Nanostructured materials; Photoelectron microscopy; Scanning electron microscopy; Semiconductor device doping; Semiconductor materials; Semiconductor nanostructures; Transmission electron microscopy; Zinc oxide;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585528