Title :
A compact model for the grounded-gate nMOS behaviour under CDM ESD stress
Author :
Russ, Christian ; Verhaege, Koen ; Bock, Karlheinz ; Roussel, Philippe J. ; Groeseneken, Guido ; Maes, Herman E.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The parasitic bipolar transistor inherent to grounded gate nMOS transistors is modelled, accounting for the specific conditions applied by CDM ESD stress. The avalanching, the triggering of snapback and the CDM-specific bipolar saturation mode are addressed. The optimal gate length for CDM protection in advanced submicron technologies is discussed.
Keywords :
CMOS integrated circuits; MOSFET; avalanche breakdown; capacitance; electrostatic discharge; equivalent circuits; integrated circuit modelling; protection; semiconductor device models; thermal analysis; transient analysis; CDM ESD stress; CDM protection; NMOSFET; advanced submicron technologies; avalanching; bipolar saturation mode; compact model; grounded-gate nMOS behaviour; n-channel device; optimal gate length; parasitic bipolar transistor; snapback triggering; thermal model; Avalanche breakdown; CMOS integrated circuits; CMOSFETs; Capacitance; Electrostatic discharges; Equivalent circuits; Integrated circuit modeling; Protection; Semiconductor device breakdown; Semiconductor device modeling; Semiconductor device thermal factors; Transient analysis;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 1996. Proceedings
Print_ISBN :
1-878303-69-4
DOI :
10.1109/EOSESD.1996.865157
