DocumentCode
2367153
Title
Physics based current and capacitance model of short-channel double gate and gate-all-around MOSFETs
Author
Borli, H. ; Kolberg, S. ; Fjeldly, T.A.
Author_Institution
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Kjeller
fYear
2008
fDate
24-27 March 2008
Firstpage
493
Lastpage
498
Abstract
We present a precise two-dimensional current and capacitance model for nanoscale double gate and gate-all-around MOSFETs covering a wide range of operating regions, geometries and material combinations. The modeling in the sub-threshold regime is based on conformal mapping techniques. In moderate to strong inversion, we obtain self-consistent results based on the 2D Poissonpsilas equation. The results are in excellent agreement with numerical simulations.
Keywords
MOSFET; Poisson equation; capacitance; conformal mapping; nanotechnology; Poisson equation; capacitance model; conformal mapping; gate-all-around MOSFET; nanoscale double gate; physics based current; short-channel double gate; Capacitance; MOSFETs; Nanoelectronics; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585535
Filename
4585535
Link To Document