DocumentCode
2367156
Title
Electro-Thermal Simulation of Current Filamentation in 3.3-kV Silicon p+- n-- n+Diodes with Differenth Edge Terminations
Author
Felsl, H.P. ; Falck, E. ; Niedernostheide, F.-J. ; Milady, S. ; Silber, D. ; Lutz, J.
Author_Institution
Infineon Technol., Munich
fYear
2006
fDate
4-8 June 2006
Firstpage
1
Lastpage
4
Abstract
We investigate the current filamentation behavior during reverse recovery in high-voltage 3.3-kV silicon p+ - n- - n+ diodes with transient S-shape negative differential resistance characteristics. The transient I-U-bistability occuring in the reverse recovery period leads to a non-uniform, current distribution in the diodes when they are turned off with a high current rate di/dl. In this paper we compare the filament behavior of diodes without any edge termination with that of diodes providing a non-optimized JTE (junction termination extension), an optimized JTE, and a beveled edge termination by means of isothermal and electro-thermal device simulations. The observed differences are explained by analyzing the transient electric-field, current-density and temperature distributions in the devices
Keywords
current density; current distribution; elemental semiconductors; p-i-n diodes; semiconductor device models; silicon; 3.3 kV; Si; current density; current distribution; current filamentation; different edge terminations; electrothermal simulation; filament behavior; isothermal simulation; junction termination extension; negative differential resistance; reverse recovery; silicon p+ - n- - n+ diodes; temperature distributions; transient electric field; Anodes; Cathodes; Charge carrier processes; Current density; Current distribution; Diodes; Fluctuations; Silicon; Switches; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location
Naples
Print_ISBN
0-7803-9714-2
Type
conf
DOI
10.1109/ISPSD.2006.1666059
Filename
1666059
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