DocumentCode
2367166
Title
Electronic properties and doping mechanism in cuprates by first-principles calculations
Author
Filippetti, A. ; Fiorentini, Vincenzo
Author_Institution
Dept. of Phys., Univ. of Cagliari, Monserrato
fYear
2008
fDate
24-27 March 2008
Firstpage
499
Lastpage
503
Abstract
The electronic properties of copper oxides represent an historical challenge for first-principles calculations, since the low-magnetization state (S=1/2) of Cu2+ ions is not correctly described by standard theories (such as the local-spin density functional theory). Here we present results obtained through our novel self-interaction free density functional scheme (the pseudo SIC [1]) for a range of different cuprates, with CuO2 units arranged in 3-dimensional (CuO doped with Mn), bi dimensional (YBa2Cu3O6+x), and one-dimensional (GeCuO3) fashion. In all the cases we give a sound description of the chemistry and the electronic and magnetic properties of these systems: In CuO Mn-doping acts as a single donor and induces a simultaneous insulating-to-metal and antiferromagnetic-to ferromagnetic phase transition driven by double-exchange. In YBa2Cu3O6+x the phase transition from antiferromagnetic insulating to paramagnetic metal is mainly governed by the ordering of doping oxygens in the Cu(I)-O-Cu(I) chains.
Keywords
doping; ferromagnetic-antiferromagnetic transitions; spin density waves; antiferromagnetic-to-ferromagnetic phase transition; copper oxides; doping mechanism; electronic properties; first-principles calculations; local-spin density functional theory; low-magnetization state; self-interaction free density functional scheme; simultaneous insulating-to-metal transition; Antiferromagnetic materials; Chemistry; Copper; Density functional theory; Doping; Insulation; Magnetic properties; Mechanical factors; Paramagnetic materials; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1572-4
Electronic_ISBN
978-1-4244-1573-1
Type
conf
DOI
10.1109/INEC.2008.4585536
Filename
4585536
Link To Document