• DocumentCode
    2367166
  • Title

    Electronic properties and doping mechanism in cuprates by first-principles calculations

  • Author

    Filippetti, A. ; Fiorentini, Vincenzo

  • Author_Institution
    Dept. of Phys., Univ. of Cagliari, Monserrato
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    499
  • Lastpage
    503
  • Abstract
    The electronic properties of copper oxides represent an historical challenge for first-principles calculations, since the low-magnetization state (S=1/2) of Cu2+ ions is not correctly described by standard theories (such as the local-spin density functional theory). Here we present results obtained through our novel self-interaction free density functional scheme (the pseudo SIC [1]) for a range of different cuprates, with CuO2 units arranged in 3-dimensional (CuO doped with Mn), bi dimensional (YBa2Cu3O6+x), and one-dimensional (GeCuO3) fashion. In all the cases we give a sound description of the chemistry and the electronic and magnetic properties of these systems: In CuO Mn-doping acts as a single donor and induces a simultaneous insulating-to-metal and antiferromagnetic-to ferromagnetic phase transition driven by double-exchange. In YBa2Cu3O6+x the phase transition from antiferromagnetic insulating to paramagnetic metal is mainly governed by the ordering of doping oxygens in the Cu(I)-O-Cu(I) chains.
  • Keywords
    doping; ferromagnetic-antiferromagnetic transitions; spin density waves; antiferromagnetic-to-ferromagnetic phase transition; copper oxides; doping mechanism; electronic properties; first-principles calculations; local-spin density functional theory; low-magnetization state; self-interaction free density functional scheme; simultaneous insulating-to-metal transition; Antiferromagnetic materials; Chemistry; Copper; Density functional theory; Doping; Insulation; Magnetic properties; Mechanical factors; Paramagnetic materials; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585536
  • Filename
    4585536