A Landmark in Electrical Performance of IGBT Modules Utilizing Next Generation Chip Technologies

The aim of this work is to demonstrate that future high power IGBT modules will be capable of providing electrical performance not matched to date in terms of low losses, soft turn-off characteristics, square RBSOA, and full over-current and over-voltage self-protection mechanisms under fault conditions. First ever prototype modules were fabricated incorporating heavily paralleled 3300V chips employing the next generation enhanced-planar IGBT (EP-IGBT) technology and the field charge extraction diode (FCE) concept. In this paper, we show that the two technologies will provide the module with outstanding characteristics, therefore promising higher levels of performance in tomorrow´s applications. In addition, we present a set of results where two 3300V IGBT modules were tested in parallel under extreme RBSOA conditions with a forced temperature difference of up to 100 degC. The modules were capable of turning off 6000A at a DC-link voltage of 2600V in spite of the temperature induced current mismatch and associated redistribution mechanisms