Title :
A compact model of channel electron mobility for nano scale strained-Si nMOSFET
Author :
Xiaojian, Li ; Yaohua, Tan ; Lilin, Tian
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing
Abstract :
A compact model of channel electron mobility for strained-silicon is suggested in this paper. The model can be used for nano scale simulation since thin-film quantum confinement is considered. It is suitable for <100>/<110> channel nMOSFET.
Keywords :
MOSFET; electron mobility; elemental semiconductors; semiconductor device models; silicon; Si; channel electron mobility; nMOSFET; strained-silicon; thin-film quantum confinement; Electron mobility; MOSFET circuits; Nanoelectronics;
Conference_Titel :
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1572-4
Electronic_ISBN :
978-1-4244-1573-1
DOI :
10.1109/INEC.2008.4585537
