Title :
Nano-electronics-a new field for SISPAD
Author_Institution :
Toyo Univ., Saitama, Japan
Abstract :
Although silicon microelectronics will remain in the main stream of electronics, evolution to nanoelectronics will be emerging. In nanoelectronics the wave-like characteristics of carriers and Coulomb blockade of tunneling of carriers are two principal physical principles and the continuum model for space charge due to ionized dopants is no longer valid. Atomic level modeling of carrier-wave scattering from the boundary and materials processing, and statistical and dynamical modeling of tunneling of carriers through a potential barrier, and single electron circuits will be a new field of SISPAD for nanoelectronics.
Keywords :
nanotechnology; semiconductor device models; Coulomb blockade; SISPAD; atomic level model; carrier tunneling; carrier-wave scattering; dynamical model; ionized dopant; nanoelectronics; potential barrier; single electron circuit; space charge; statistical model; Circuits; Electrons; Materials processing; Microelectronics; Nanoelectronics; Scattering; Semiconductor process modeling; Silicon; Space charge; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
DOI :
10.1109/SISPAD.1996.865245
