• DocumentCode
    2367276
  • Title

    Path integral quantum Monte Carlo simulation of a parabolic quantum dot

  • Author

    Batenipour, N. ; Saghafi, K. ; Moravvej-Farshi, M.K.

  • Author_Institution
    Dept. of Electr. Eng., Islamic Azad Univ., Tehran
  • fYear
    2008
  • fDate
    24-27 March 2008
  • Firstpage
    530
  • Lastpage
    533
  • Abstract
    In this paper we present a numerical simulation for a two-dimensional parabolic quantum dot (2D-PQD) using path integral Monte Carlo (PIMC). We model a typical GaAs quantum dot (QD) which is centered in a square plane of size ~(5 nm)2. We calculate the energy of the quantum dot system in terms of temperature and number of confined electrons, with and without electron-electron interaction. We also calculate QD energy and electron density for the QD confining up to 20 electrons. Moreover, we describe the effect of electron-electron interaction and confining potential on electron distribution. We also compare electron density in both weak and strong interaction regimes. Then, we investigate shell-filling and formation of Wigner molecule structure in strong interaction regime. Finally, we study the effect of external magnetic field on QD energy and electron density. We demonstrate the compression of Wigner molecule and shell combination under applied magnetic field.
  • Keywords
    III-V semiconductors; Monte Carlo methods; electron density; gallium arsenide; semiconductor quantum dots; GaAs; GaAs quantum dot; Wigner molecule structure; electron density; electron-electron interaction; path integral quantum Monte Carlo simulation; two-dimensional parabolic quantum dot; Nanoelectronics; Quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1572-4
  • Electronic_ISBN
    978-1-4244-1573-1
  • Type

    conf

  • DOI
    10.1109/INEC.2008.4585542
  • Filename
    4585542