DocumentCode
2367296
Title
Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier
Author
Yunusov, N. ; Atametov, R.K. ; Yuldasheva, Sh.N.
Author_Institution
Tashkent Univ. of Inf. Technol., Tashkent
fYear
2007
fDate
26-28 Sept. 2007
Firstpage
1
Lastpage
2
Abstract
The quantity ratio simulating the characteristics of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier as a power function of input optical radiation is presented in the work.
Keywords
amplifiers; field effect transistors; p-n junctions; photodiodes; current amplifier; field-effect transistor; optical radiation; p-n controlling junction; photo receiving device; photodiode; FETs; Mathematical model; Optical amplifiers; Optical control; Optical devices; P-n junctions; Photodiodes; Power amplifiers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Internet, 2007. ICI 2007. 3rd IEEE/IFIP International Conference in Central Asia on
Conference_Location
Tashkent
Print_ISBN
978-1-4244-1007-1
Type
conf
DOI
10.1109/CANET.2007.4401699
Filename
4401699
Link To Document