DocumentCode :
2367356
Title :
Modeling and simulation of spatial dependent transient diffusion after BF2 implantation
Author :
Hofler, Alxander ; Feudel, Thomas ; Strecker, Norbert ; Fichtner, Wolfgang ; Suzuki, Kenji ; Sasaki, Nobuo ; Kataoka, Yuji ; Gratsch, F.
Author_Institution :
Integrated Syst. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
fYear :
1996
fDate :
2-4 Sept. 1996
Firstpage :
13
Lastpage :
14
Abstract :
In this paper, we study the effect of high-dose BF2 implantation/annealing sequences on the redistribution of dopant atoms already present in silicon crystal. Transient diffusion and activation effects are investigated using numerical simulation and experimental data obtained from silicon samples containing a buried layer of boron.
Keywords :
annealing; diffusion; doping profiles; ion implantation; semiconductor device models; Si:BF4; activation effects; annealing sequence; dopant redistribution; ion implantation; numerical simulation; spatial dependent transient diffusion; transient diffusion; Annealing; Boron; Crystallization; Implants; Laboratories; Semiconductor device modeling; Semiconductor process modeling; Silicon; Tail; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on
Print_ISBN :
0-7803-2745-4
Type :
conf
DOI :
10.1109/SISPAD.1996.865250
Filename :
865250
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2367356
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