Breakthrough of on-resistance Si limit by Super 3D MOSFET under 100V breakdown voltage

Author

Yamaguchi, Hitoshi ; Urakami, Yasushi ; Sakakibara, Jun

Author_Institution

Res. Labs., Denso Corp., Nisshin

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

Under 100V breakdown voltage, a new device structure is required for the purpose of reducing on-resistance and for high reliability. In this study, it was demonstrated that the Si limit of on-resistance was broken by super 3D MOSFET structure that we had already proposed in an actual prototype fabrication. Its on-resistance was 16.4mOmegamiddotmm² at the breakdown voltage of 58V. Moreover, it was clarified that the UIS (undamped inductive switching) endurance of this device was 3.08 J/cm² with 3 mm times 3 mm size chip and this result is 1.5 times stronger than that of conventional structure. This super 3D structure was fabricated by unique simplified trench filling epitaxial process and high aspect ratio trench etching process. The super 3D MOSFET is very attractive for automotive motor drive use

Keywords

epitaxial growth; etching; power MOSFET; semiconductor device breakdown; semiconductor device reliability; silicon; 58 V; Si; aspect ratio trench etching process; automotive motor drive; breakdown voltage; on-resistance reduction; silicon limit; super 3D MOSFET; trench filling epitaxial process; undamped inductive switching; Automotive engineering; Contact resistance; Etching; Fabrication; Filling; Laboratories; MOSFET circuits; Power MOSFET; Power semiconductor devices; Prototypes;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666071

Filename

1666071