Title :
RF diamond MISFETs using surface accumulation layer
Author :
Hirama, K. ; Koshiba, T. ; Yohara, K. ; Takayanagi, H. ; Yamauchi, S. ; Satoh, M. ; Kawarada, H.
Author_Institution :
Waseda Univ., Tokyo
Abstract :
Diamond metal-insulator-semiconductor field-effect-transistors (MISFETs) utilizing a hole accumulation layer have been fabricated on a hydrogen-terminated (H-terminated) diamond surface. The highest cut-off frequency (fT) of 30 GHz and the maximum frequency of oscillation (fmax) of 60 GHz were obtained in the 0.35 mum gate diamond MISFET. RF power operations of diamond MISFETs were demonstrated for the first time. In RF power operation, the high power density of 2.14 W/mm was obtained at 1 GHz
Keywords :
MISFET; diamond; hole traps; microwave field effect transistors; wide band gap semiconductors; 0.35 micron; 30 GHz; 60 GHz; RF power operations; gate diamond MISFET; hydrogen-terminated diamond surface; metal-insulator-semiconductor field-effect-transistors; surface accumulation layer; Boron; Cutoff frequency; Electrodes; FETs; Fabrication; Gold; MISFETs; Metal-insulator structures; Radio frequency; Temperature;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666073
