Title :
Termination Structures for Diamond Schottky Barrier Diodes
Author :
Brezeanu, Mihai ; Avram, M. ; Rashid, S.J. ; Amaratunga, G.A.J. ; Butler, T. ; Rupesinghe, N.L. ; Udrea, F. ; Tajani, A. ; Dixon, M. ; Twitchen, D.J. ; Garraway, A. ; Chamund, D. ; Taylor, P. ; Brezeanu, G.
Author_Institution :
Dept. of Eng., Cambridge Univ.
Abstract :
A comprehensive study on the off-state performance of synthetic single crystal (SSC) diamond Schottky barrier diodes (SBDs) is the subject of this paper. Three termination structures suitable for unipolar diamond power devices are numerically investigated. Comparisons between the three terminations, based on blocking performance and area consumption are presented. Optimum design parameters derived from simulations are included for each structure. Experimental results of reverse-biased diamond SBDs for the first time with ramp angle termination are also presented
Keywords :
Schottky diodes; diamond; power semiconductor diodes; semiconductor device models; semiconductor materials; blocking performance; diamond Schottky barrier diodes; off-state performance; reverse-biased diamond SBD; synthetic single crystal; three termination structure; unipolar diamond power devices; Atomic layer deposition; Boron; Cathodes; Chemical vapor deposition; Fabrication; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Thermal conductivity;
Conference_Titel :
Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on
Conference_Location :
Naples
Print_ISBN :
0-7803-9714-2
DOI :
10.1109/ISPSD.2006.1666074
