Termination Structures for Diamond Schottky Barrier Diodes

Author

Brezeanu, Mihai ; Avram, M. ; Rashid, S.J. ; Amaratunga, G.A.J. ; Butler, T. ; Rupesinghe, N.L. ; Udrea, F. ; Tajani, A. ; Dixon, M. ; Twitchen, D.J. ; Garraway, A. ; Chamund, D. ; Taylor, P. ; Brezeanu, G.

Author_Institution

Dept. of Eng., Cambridge Univ.

fYear

2006

fDate

4-8 June 2006

Firstpage

1

Lastpage

4

Abstract

A comprehensive study on the off-state performance of synthetic single crystal (SSC) diamond Schottky barrier diodes (SBDs) is the subject of this paper. Three termination structures suitable for unipolar diamond power devices are numerically investigated. Comparisons between the three terminations, based on blocking performance and area consumption are presented. Optimum design parameters derived from simulations are included for each structure. Experimental results of reverse-biased diamond SBDs for the first time with ramp angle termination are also presented

Keywords

Schottky diodes; diamond; power semiconductor diodes; semiconductor device models; semiconductor materials; blocking performance; diamond Schottky barrier diodes; off-state performance; reverse-biased diamond SBD; synthetic single crystal; three termination structure; unipolar diamond power devices; Atomic layer deposition; Boron; Cathodes; Chemical vapor deposition; Fabrication; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on

Conference_Location

Naples

Print_ISBN

0-7803-9714-2

Type

conf

DOI

10.1109/ISPSD.2006.1666074

Filename

1666074